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preliminary p-dsof-8-1 p-dsof-8-2 surface mount piezoresistive silicon absolute pressure sensor KP202-A/ak kp203-a/ak kp205-a semiconductor group 1 1998-10-16 features ? high sensitivity and linearity ? fast response ? very small dimensions ? low cost ? produced in qualified semiconductor fabrication lines ? smd housing ? built in silicon temperature sensor type marking ordering code pressure range package KP202-A KP202-A C 0 100 kpa (1.0 bar) p-dsof-8-1 KP202-Ak 0 100 kpa (1.0 bar) p-dsof-8-2 kp203-a kp203-a C 0 200 kpa (2.0 bar) p-dsof-8-1 kp203-ak 0 200 kpa (2.0 bar) p-dsof-8-2 kp205-a kp205-a C 0 1000 kpa (10 bar) p-dsof-8-1
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 2 1998-10-16 pin configuration 1 not connected 2 v s C 3 v out + 4 not connected 5 temperature sensor 6 v s + and temperature sensor 7 v out C 8 not connected eha07304 4 3 2 1 5 6 7 8 out v + _ v s n.c. s v _ + v out n.c. temp. sensor and temp. sensor n.c. eha07367 s n.c. out n.c. v v + 4 3 _ 2 1 temp. sensor s out temp. sensor n.c. 5 6 v 7 8 v and + _ kp20x-a kp20x-ak
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 3 1998-10-16 electric network four piezoresistors form a bridge circuit, providing a very accurate and linear output voltage, directly proportional to the applied pressure. with a temperature sensor chip r t , that is built in the housing, can be used to compensate the temperature drift of the pressure sensor. sensor schematic piezoresistors r 1 r 4 denote the pressure sensitive resistors connected as a wheatstone bridge. r t is a kty-series temperature dependent resistor with a positive tc. v out v o v fin + v s r 1 p () r 3 p () r 2 p () r 4 p () C r 1 p () [ r 2 p ()] r 3 p () r 4 p ()] + [ + ------------------------------------------------------------------------------------------ - == r 1 0 () r 2 0 () r 3 0 () r 4 0 () r b @@@@ eha07305 s v v out _ + r 1 2 r 4 r r 3 _ + r t 735 6 2
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 4 1998-10-16 1) overpressure is limited to p max , due to absorption of gas into the protective gel covering the sensor at higher pressures. abrupt decrease of pressure from values higher than p max to low pressures can cause in the gel to rupture. maximum ratings parameter symbol value unit supply voltage v s max 12 v overpressure 1) p max 250 kpa burst pressure KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a p burst 400 800 2000 kpa operating temperature range t op C 40 + 125 c storage temperature range t stg C 40 + 125 c mechanical shock survival 2000 g
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 5 1998-10-16 electrical characteristics at t a = 25 c and v s = 5 v unless otherwise specified parameter symbol value unit min. typ. max. pressure range KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a p n 0 0 0 C C C 100 200 1000 kpa bridge resistance r b 468k w sensitivity KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a s 0.24 0.11 0.036 0.44 0.20 0.052 0.74 0.30 0.080 mv/v kpa full scale span ( p = p n , v s =5v) KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a v fin 120 110 180 220 200 260 370 300 400 mv offsetsignal p = p 0 v o C25 C +25 mv linearity error (best fit straight line) p = p 0 p n KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a f l C C C 0.4 0.4 0.3 C C C % v fin pressure hysteresis KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a p h C C C C 0.1 0.1 C C C % v fin
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 6 1998-10-16 1) change in value of tc v fin or tcv between 25 c and 125 c relative to v fin (25 c) 2) change in rb between 25 c and 125 c relative to rb (25 c) 3) change in v 0 (25 c) or v fin (25 c) after temperature cycle 25 c ? 125 c ? 25 c relative to v fin (25 c) temperature characteristics at t 1 = 25 c, t 2 = 90 c, t 3 = 25 c and v s = 5 v unless otherwise specified parameter symbol value unit min. typ. max. temperature coefficient of span 1) tc v fin C C 0.17 - % k -1 temperature coefficient of offset 1) KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a tc v 0 C C C 0.01 0.01 0.01 C C C %k -1 temperature coefficient of bridge resistance 2) tc r b C + 0.26 - % k -1 temperature hysteresis of span 3) KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a th v fin C C C 0.4 0.3 0.2 C C C %k -1 temperature hysteresis of offset 3) KP202-A, KP202-Ak kp203-a, kp203-ak kp205-a th v0 C C C 0.3 0.3 0.2 C C C % v fin -1
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 7 1998-10-16 temperature compensation cost-effective temperature compensation can be achieved using standard ohmic resistors in combination with the built in temperature sensor. with fixed values for r v and r l a temperature compensation error of the output signal (span plus offset) of typical less then 1% is achieved in the range 10 c to 40 c (see figure below). a better temperature compensation is possible by measurement of the temperature coefficients of the sensor. in this case r v is optimized as described in siemens databook 03.97 pages 45-46 (or website: http://www.siemens.de/semiconductor). alternatively an asic can be used for calibration and compensation. electrical circuit for temperature compensation broken line denotes sensor assembly. r v and r l need to be added externally. eha07306 s v v out _ + l r _ + out v r t v r 2 6 73 r 1 r 4 r 3 r 2 5 kp200
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 8 1998-10-16 error band of typical signal drift after temperature compensation using fixed values for r v and r l using fixed resistor r v = 2200 w and r l = 1300 w . graph shows typical results for compensated span + offset signals. -4 -20 -5 40 temperature 020 60 80 c span + offset -1 -3 -2 drift 0 1 2 3 % 5 = 2200 = 1300 l r v r w w span eha07368
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 9 1998-10-16 output voltage for nominal and maximal pressure range KP202-A, KP202-Ak eha07390 0 pressure 50 100 150 200 250 kpa output voltage max. sensitivity typ. sensitivity min. sensitivity p 0 mv -200 0 200 400 600 800 1000 p n KP202-A/ak max. p
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 10 1998-10-16 output voltage for nominal and maximal pressure range kp203-a, kp203-ak eha07369 0 pressure 50 100 150 200 250 kpa output voltage max. sensitivity typ. sensitivity min. sensitivity n p p 0 mv -100 0 100 200 300 400 500 max. p
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 11 1998-10-16 output voltage for nominal and maximal pressure range kp205-a eha07370 0 pressure 200 400 600 800 1000 kpa output voltage max. sensitivity typ. sensitivity min. sensitivity n p p 0 mv -100 0 100 200 300 400 500 max. p limited by gas absorption into the protective gel
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 12 1998-10-16 package outlines the package is made of a thermoplast housing and copper leadframe with nipdau finish. the chip is glued into the premolded plastic package using silicone glue, gold-wire bonded and covered with a protective gel. for the products kp20x-ak a cap is mounted on the housing. 3? max 2.8 0.1 0.1 0.1 0.2 -0.05 +0.1 7 0.1 0.1 8.6 -0.05 +0.1 0.4 0.8 +0.1 -0.05 7 0.1 0.2 3.81 1.27 r 0.55 0.2 gmx05998 p-dsof-8-1 (plastic dual small outline flat package)
KP202-A/ak, kp203-a/ak kp205-a semiconductor group 13 1998-10-16 7 0.1 0.1 8.6 -0.05 +0.1 0.4 0.8 +0.1 -0.05 7 0.1 0.2 3.81 1.27 r 0.55 0.2 3.8 7.96 0.1 3.8 29.8 (13.6) 0.1 0.1 ?3.25 ?4 3.8 7.96 3.2 (2.8) -0.05 +0.1 0.2 gmx09110 p-dsof-8-2 (plastic dual small outline flat package) subject to change exterior packaging package outlines for tubes, trays etc. are contained in our data book package information. dimensions in mm

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